Mechanical control of spin-orbit splitting in GaAs and In0.04Ga0.96As epilayers
Type of Work
Article
Date
6-27-2006
Journal Title
Physical Review B
Journal ISSN
2469-9969
Journal Volume
73
Journal Issue
24
First Page
241316
DOI
10.1103/PhysRevB.73.241316
Abstract
Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage, and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift-diffusion model is used to determine the value of the spin-strain coupling coefficient for a strained GaAs epilayer.
Citation Information
Sih, V.; Knotz, H.; Stephens, J.; Horowitz, Viva R.; Gossard, A. C.; and Awschalom, D. D., "Mechanical control of spin-orbit splitting in GaAs and In0.04Ga0.96As epilayers" (2006). Hamilton Digital Commons.
https://digitalcommons.hamilton.edu/articles/365
Hamilton Areas of Study
Physics