Generating Spin Currents in Semiconductors with the Spin Hall Effect
Type of Work
Article
Date
9-1-2006
Journal Title
Physical Review Letters
Journal ISSN
0031-9007
Journal Volume
97
Journal Issue
9
First Page
096605
DOI
10.1103/PhysRevLett.97.096605
Abstract
We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.
Citation Information
Sih, V.; Lau, W. H.; Myers, R. C.; Horowitz, Viva R.; Gossard, A. C.; and Awschalom, D. D., "Generating Spin Currents in Semiconductors with the Spin Hall Effect" (2006). Hamilton Digital Commons.
https://digitalcommons.hamilton.edu/articles/364
Hamilton Areas of Study
Physics